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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat hFEsat tfi PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 18 0.14 21 140 MAX. 1200 1200 525 6 10 32 1.0 25 203 UNIT V V V V A A W V ns Ths 25 C IC = 2 A; IB = 0.4 A IC = 2 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO VEBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Emitter-base voltage (open collector) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. 16 -65 MAX. 1200 525 1200 6 10 3 5 32 150 150 UNIT V V V V A A A A W C C Ths 25 C November 1999 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX AVALANCHE ENERGY CAPABILITY SYMBOL PARAMETER CONDITIONS VCC = 150V; VBB = -5V; LC = 15mH;LB = 1H EAS Avalanche Energy Capability1 Ths 110 C 1.0 mJ TYP. MAX. UNIT THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCEO = VCEOMmax(550V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A;IB = 0.4 A IC = 2.0 A;IB = 0.4 A IC = 1 mA; VCE = 5 V IC = 500 mA;VCE = 5 V IC = 2.0 A; VCE = 5 V MIN. 525 19 30 17 TYP. 0.14 0.89 28 45 21 MAX. 0.2 0.5 0.1 1.0 1.0 1.5 65 25 UNIT mA mA mA mA V V V Collector cut-off current 2 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4 V; TYP. MAX. UNIT s s s s ns s ns 0.6 4.5 0.4 0.95 6.4 0.59 ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 1.67 140 2.3 203 1.9 144 2.7 216 1 Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche. 2 Measured with half sine-wave voltage (curve tracer). November 1999 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX + 50v 100-200R IC 90 % ICon 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IBon 10 % tr 30ns -IBoff tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 LC IBon 100 10 0 VCE / V LB T.U.T. -VBB min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IBon 10 % tf t T -IBoff t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. November 1999 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 2.0 VCEsat/V 1.6 IC=1A IC=1A 1.2 2A 3A 4A 0.8 0.4 0 20 40 60 80 100 Tmb / C 120 140 0.0 0.01 0.10 IB/A 1.00 10.00 Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) HFE 80 Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25C. VBESAT/V 1.4 125 C 50 30 1.2 20 15 -40 C Tj=25 C 1 10 -40C 5 0.8 25C 2 0.6 Tj = 100C 0.01 0.05 0.1 0.3 IC/A 1 2 3 5 10 0.1 0.5 1 IC/A 2 5 10 Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE = 1V HFE 80 Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. VCESAT/V 0.6 125 C 50 0.5 30 Tj = 100C 20 15 -40 C Tj=25 C 0.4 10 0.3 5 0.2 25C -40C 2 0.1 0.01 0.05 0.1 IC/A 0.5 1 2 3 5 10 0 0.2 0.4 0.6 1 IC/A 2 5 6 Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE = 5V Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.8 November 1999 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX 10 Zth / (K/W) BU1706AX VCC 0.5 1 0.2 0.1 0.05 0.02 P D 0.01 D=0 0.001 T 10u 100u 1m 10m 100m t/s 1 t tp tp LC VCL(RBSOAR) D= T 0.1 IBon PROBE POINT LB T.U.T. -VBB 100 1u 10 Fig.13. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T IC (A) 11 10 Fig.15. Test circuit for reverse bias safe operating area. Vcl 1200V; Vcc = 150V; VBB = -5V; LB = 1H;Lc = 200H 9 8 7 6 5 4 3 2 1 0 0 200 400 600 800 1,000 1,200 1,400 VCEclamp (V) Fig.14. Reverse bias safe operating area. Tj Tj max November 1999 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.16. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1999 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1999 7 Rev 1.100 |
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